Detection (thermal shutdown of a high-side FET or excessive ON-state voltage drop across a low-side FET), this pin is pulled low by the device (see Table 13: Truth table in fault conditions (detected on OUTA). 10 INB Counter clockwise input. CMOS compatible 11 CP Connection to the gate of the external MOS used for the reverse battery protection. 6.2 COMPLEMENTARY MOS (CMOS) TECHNOLOGY Modern MOSFET technology has advanced continually since its beginning in the 1950s. Figure 6–5 is a transmission electron microscope view of a part of a MOSFET. It shows the poly-Si gate and the single-crystalline Si body with visible individual Si atoms and a 1.2 nm amorphous SiO. 2/07/2005 L03 – CMOS Technology 9 FET = Field-Effect Transistor The four terminals of a fet (gate, source, drain and bulk) connect to conducting surfaces that generate a complicated set of electric fields in the channel region which depend on the relative voltages of each terminal.
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Cmos Fet Transistor
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Structure of SOI FET. Advantages of SOI Devices: Owing to oxide layer isolation, the drain/source parasitic capacitances are reduced. So, the delay and dynamic power consumption of the device is lower compared to bulk CMOS. Due to an oxide layer, the threshold voltage is less dependent on back gate bias compared to bulk CMOS.